Power Field-Effect Transistors
Active
Mature
IPB320N20N3G
Manufacturer: Infineon
Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Description:
OPTIMOS 3 POWER-TRANSISTOR
| Part Number: | IPB320N20N3G |
|---|---|
| Generic: | IPB320N20 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | October 2009 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSC320N20NS3G
|
Infineon |
| Functional Equivalent |
BSC320N20NS3GATMA1
|
Infineon |
| Manufacturer Suggested |
FDB2614
|
Onsemi |
| Functional Equivalent |
IPB320N20N3GATMA1
|
Infineon |
| Functional Equivalent |
IPD320N20N3GATMA1
|
Infineon |
| Functional Equivalent |
IPD320N20N3GXT
|
Infineon |
| Functional Equivalent |
TPH2900ENH
|
Toshiba |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med