Power Field-Effect Transistors Discontinued

IPB120N06S4-02

Manufacturer: Infineon

Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OptiMOS-T2 Power-Transistor
Part Number: IPB120N06S4-02
Generic: IPB120N06S4
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 2009
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested FDB86563-F085 Onsemi
Functional Equivalent IPB120N06S4-03 Infineon
Manufacturer Suggested IPB180N06S4-H1 Infineon
Functional Equivalent IPB45N06-09 Infineon
Functional Equivalent IPB80N06S4-07 Infineon
Functional Equivalent IPB80N06S4L-07 Infineon
Functional Equivalent IPB90N06S4L-04 Infineon
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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