Power Field-Effect Transistors Active Mature

IPB108N15N3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: IPB108N15N3GATMA1
Generic: IPB108N15
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2009
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSC110N15NS5 Infineon
Functional Equivalent BSC110N15NS5ATMA1 Infineon
Manufacturer Suggested FDB2532 Onsemi
Functional Equivalent IPB108N15N3GXT Infineon
Pricing & Availability
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

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