Power Field-Effect Transistors Discontinued

IPB054N06N3G

Manufacturer: Infineon

Power Field-Effect Transistor, 80A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: IPB054N06N3G
Generic: IPB054N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: November 2008
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested IPB057N06N Infineon
Functional Equivalent IPB80N06S205XT Infineon
Functional Equivalent IPB80N06S2H5ATMA2 Infineon
Functional Equivalent IPB80N06S2H5AUMA1 Infineon
Functional Equivalent IPB80N06S3L06ATMA1 Infineon
Functional Equivalent IRF2805 Infineon
Functional Equivalent IRHNA54064 Infineon
Functional Equivalent IRHNA54064PBF Infineon
Functional Equivalent IRHNA57064 Infineon
Functional Equivalent IRHNA57064PBF Infineon
Functional Equivalent IRHNA58064PBF Infineon
Functional Equivalent IRHSNA58064PBF Infineon
Functional Equivalent SP001571200 Infineon
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Low-Med

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