Power Field-Effect Transistors Active Mature

IPB042N10N3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: IPB042N10N3GATMA1
Generic: IPB042N10
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: February 2009
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested FDB86135 Onsemi
FFF Alternates IPB042N10N3G Infineon
Functional Equivalent IPB042N10N3G Infineon
FFF Alternates IPB042N10N3GE8187ATMA1 Infineon
Functional Equivalent IPB042N10N3GE8187ATMA1 Infineon
FFF Alternates IPB042N10N3GXT Infineon
Functional Equivalent IPB042N10N3GXT Infineon
Functional Equivalent IPB04CN10NGATMA1 Infineon
Functional Equivalent IPP039N10N5AKSA1 Infineon
Pricing & Availability
39083 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

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