Power Field-Effect Transistors
NRFND
Decline
IPB029N06N3GATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Description:
OPTIMOS 3 POWER-TRANSISTOR
| Part Number: | IPB029N06N3GATMA1 |
|---|---|
| Generic: | IPB029N06 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | December 2008 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
IPB029N06N3GE8187ATMA1
|
Infineon |
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Low-Med