Power Field-Effect Transistors Active Mature

IPB027N10N3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: IPB027N10N3GATMA1
Generic: IPB027N10
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: February 2009
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested CSD19536KTT TI
Manufacturer Suggested FDB047N10 Onsemi
FFF Alternates IPB027N10N3G Infineon
Functional Equivalent IPB027N10N3G Infineon
FFF Alternates IPB027N10N3GXT Infineon
Functional Equivalent IPB027N10N3GXT Infineon
Functional Equivalent IPB027N10N5 Infineon
Functional Equivalent IPB027N10N5ATMA1 Infineon
Functional Equivalent IPB027N10N5E8187ATMA1 Infineon
FFF Alternates MDE10N026RH Magnachip
Functional Equivalent MDE10N026RH Magnachip
Functional Equivalent STH310N10F7-2 ST Micro
Functional Equivalent STH310N10F7-6 ST Micro
Functional Equivalent STP310N10F7 ST Micro
Pricing & Availability
48640 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

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