Power Field-Effect Transistors NRFND Decline

IPB020NE7N3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: IPB020NE7N3GATMA1
Generic: IPB020NE7
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 2009
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IPB017N08N5 Infineon
Functional Equivalent IPB017N08N5ATMA1 Infineon
Functional Equivalent IPB020N08N5 Infineon
Functional Equivalent IPB020N08N5ATMA1 Infineon
Functional Equivalent IPP020N08N5 Infineon
Functional Equivalent IPP020N08N5AKSA1 Infineon
Pricing & Availability
4328 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Low-Med

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