Power Field-Effect Transistors Discontinued

IPB019N06L3G

Manufacturer: Infineon

Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: IPB019N06L3G
Generic: IPB019N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2008
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested 2SK3812-ZP Renesas
FFF Alternates 934065175118 Nexperia
Functional Equivalent 934065175118 Nexperia
Functional Equivalent IPB120N06S4H1XT Infineon
Manufacturer Suggested IRLS3036TRLPBF Infineon
FFF Alternates PSMN1R7-60BS 118
FFF Alternates PSMN1R7-60BS Nexperia
Functional Equivalent PSMN1R7-60BS 118
Functional Equivalent PSMN1R7-60BS Nexperia
Functional Equivalent PSMN2R0-60BS NXP
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Low-Med

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