Power Field-Effect Transistors Active Mature

IPB017N10N5ATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS 5 POWER-TRANSISTOR, 100 V
Part Number: IPB017N10N5ATMA1
Generic: IPB017N10
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: October 2015
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 6
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested FDB0300N1007L Onsemi
FFF Alternates IPB017N10N5 Infineon
Functional Equivalent IPB017N10N5 Infineon
Functional Equivalent STH240N10F7-2 ST Micro
Functional Equivalent STH240N10F7-6 ST Micro
Functional Equivalent STH315N10F7-2 ST Micro
Functional Equivalent STH315N10F7-6 ST Micro
Functional Equivalent STP315N10F7 ST Micro
Pricing & Availability
4772 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

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