Power Field-Effect Transistors
Active
Mature
IPB017N10N5ATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS 5 POWER-TRANSISTOR, 100 V
| Part Number: | IPB017N10N5ATMA1 |
|---|---|
| Generic: | IPB017N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | October 2015 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 6 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
FDB0300N1007L
|
Onsemi |
| FFF Alternates |
IPB017N10N5
|
Infineon |
| Functional Equivalent |
IPB017N10N5
|
Infineon |
| Functional Equivalent |
STH240N10F7-2
|
ST Micro |
| Functional Equivalent |
STH240N10F7-6
|
ST Micro |
| Functional Equivalent |
STH315N10F7-2
|
ST Micro |
| Functional Equivalent |
STH315N10F7-6
|
ST Micro |
| Functional Equivalent |
STP315N10F7
|
ST Micro |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med