Power Field-Effect Transistors
NRFND
Decline
IPA60R190E6
Manufacturer: Infineon
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Description:
600 V COOLMOS E6 POWER MOSFET
| Part Number: | IPA60R190E6 |
|---|---|
| Generic: | IPA60R190 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | May 2010 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
FCPF190N60E
|
Onsemi |
| Manufacturer Suggested |
FCPF190N60-F152
|
Onsemi |
| Manufacturer Suggested |
FCPF190N65S3L1
|
Onsemi |
| Functional Equivalent |
IPA60R190P6
|
Infineon |
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: Low
- Supply Chain: Med-High