Power Field-Effect Transistors
NRFND
Decline
IMZ120R045M1
Manufacturer: Infineon
Power Field-Effect Transistor, 52A I(D), 1200V, 0.059ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
Manufacturer Description:
CoolSiC 1200V SiC Trench MOSFET
| Part Number: | IMZ120R045M1 |
|---|---|
| Generic: | IMZ120R045 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | January 2020 |
|---|---|
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 4 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
MSC025SMA120B4
|
Microchip |
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Med
- Environmental: Low
- Supply Chain: Med-High
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