Power Field-Effect Transistors
Active
Mature
IMBG120R030M1H
Manufacturer: Infineon
Power Field-Effect Transistor, 56A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263
Manufacturer Description:
CoolSiC 1200V SiC Trench MOSFET
| Part Number: | IMBG120R030M1H |
|---|---|
| Generic: | IMBG120R030 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | September 2020 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 7 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Low
- Supply Chain: Med