Insulated Gate Bipolar Transistors Active Mature

IGW50N65H5

Manufacturer: Infineon

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

Manufacturer Description: 650 V IGBT HIGH SPEED SWITCHING SERIES FIFTH GENERATION
Part Number: IGW50N65H5
Generic: IGW50N65
CAGE Code: C6489, 4KYR2
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
Date of Introduction: November 2012
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -40.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates IGW50N65H5FKSA1 Infineon
Functional Equivalent IGW50N65H5FKSA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low-Med

Related Products

1MBH65D-090A

Insulated Gate Bipolar Transistor, 65A I(C), 900V V(BR)CES, N-Channel

Fuji Elec

1MBI200L-120

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Fuji Elec

1MBI2400U4D-170

Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel

Fuji Elec

1MBI300JN120

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES

Fuji Elec