IGB110S101XTMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 23A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
| Part Number: | IGB110S101XTMA1 |
|---|---|
| Generic: | IGB110S101 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | December 2024 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 4 |
| Operating Temperature: | -40.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
Abacus Technologies supplies IGB110S101XTMA1 from INFINEON. Inventory shown on this page reflects quantity on hand when available: 19800 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med
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