Insulated Gate Bipolar Transistors
NRFND
Decline
FZ1200R33HE3
Manufacturer: Infineon
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel
Manufacturer Description:
IHM-B module with fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode
| Part Number: | FZ1200R33HE3 |
|---|---|
| Generic: | FZ1200R33 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Insulated Gate Bipolar Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | April 2010 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Med-High
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