Insulated Gate Bipolar Transistors Active Mature

DF160R12W2H3F_B11

Manufacturer: Infineon

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Manufacturer Description: High-Speed 3 IGBT and SiC diode and Press FIT/NTC
Part Number: DF160R12W2H3F_B11
Generic: DF160R12
CAGE Code: C6489, 4KYR2
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
Date of Introduction: December 2012
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 30
Operating Temperature: -40.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies DF160R12W2H3FB11, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 49 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
FFF Alternates DF160R12W2H3FB11BPSA1 Infineon
Functional Equivalent DF160R12W2H3FB11BPSA1 Infineon
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

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