Power Field-Effect Transistors
Active
Mature
BSZ900N20NS3GATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS 3 POWER-TRANSISTOR
| Part Number: | BSZ900N20NS3GATMA1 |
|---|---|
| Generic: | BSZ900N20 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | September 2010 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSZ900N20NS3G
|
Infineon |
| Manufacturer Suggested |
FQD18N20V2
|
Onsemi |
Pricing & Availability
188 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med
Need help? Email sales or call (800) 701-8152.