Power Field-Effect Transistors
Discontinued
BSZ12DN20NS3G
Manufacturer: Infineon
Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OptiMOS 3Power-Transistor
| Part Number: | BSZ12DN20NS3G |
|---|---|
| Generic: | BSZ12 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | September 2010 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSC12DN20NS3G
|
Infineon |
| Functional Equivalent |
BSC12DN20NS3GATMA1
|
Infineon |
| Functional Equivalent |
BSC12DN20NS3GXT
|
Infineon |
| Manufacturer Suggested |
BSZ900N20NS3G
|
Infineon |
Pricing & Availability
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Risk Indicators
- Lifecycle: High
- Environmental: Med