Power Field-Effect Transistors Active Mature

BSZ120P03NS3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOSP3 POWER-TRANSISTOR
Part Number: BSZ120P03NS3GATMA1
Generic: BSZ120P03
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: March 2010
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 8

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSZ120P03NS3G Infineon
Functional Equivalent SI5419DU-T1-GE3 Vishay
Functional Equivalent SI7619DN-T1-GE3 Vishay
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip