Power Field-Effect Transistors
Active
Mature
BSZ100N06NSATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 40A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS POWER-TRANSISTOR
| Part Number: | BSZ100N06NSATMA1 |
|---|---|
| Generic: | BSZ100N06 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | January 2011 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | POST/STUD MOUNT |
|---|---|
| Terminals: | 8 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSZ100N06NS
|
Infineon |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med