Power Field-Effect Transistors
NRFND
Decline
BSZ067N06LS3G
Manufacturer: Infineon
Power Field-Effect Transistor, 59A I(D), 60V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
MOSFET
| Part Number: | BSZ067N06LS3G |
|---|---|
| Generic: | BSZ067N06 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | December 2008 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
DMT6010LPS-13
|
Diodes |
| Functional Equivalent |
DMTH6010LK3-13
|
Diodes |
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Med-High