Power Field-Effect Transistors
Active
Mature
BSZ060NE2LSATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 12A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
N-CHANNEL OPTIMOS POWER-MOSFET
| Part Number: | BSZ060NE2LSATMA1 |
|---|---|
| Generic: | BSZ060NE2 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | September 2011 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
APM4220KAC-TRG
|
Anpec |
| FFF Alternates |
BSZ060NE2LS
|
Infineon |
| Functional Equivalent |
BSZ060NE2LS
|
Infineon |
| Manufacturer Suggested |
CSD17577Q3A
|
TI |
| Manufacturer Suggested |
FDMC7570S
|
Onsemi |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med