Power Field-Effect Transistors Active Decline

BSP315P

Manufacturer: Infineon

Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: SIPMOS SMALL-SIGNAL-TRANSISTOR
Part Number: BSP315P
Generic: BSP315
CAGE Code: C6489, 4KYR2
NSN: 5961-12-368-3593
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 1999
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 4

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates BSP315PH6327 Infineon
Functional Equivalent BSP315PH6327 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip