Power Field-Effect Transistors Active Mature

BSP296NH6327XTSA1

Manufacturer: Infineon

Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS SMALL-SIGNAL-TRANSISTOR
Part Number: BSP296NH6327XTSA1
Generic: BSP296NH6327
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: April 2013
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates BSP296NH6327 Infineon
Functional Equivalent BSP296NH6327 Infineon
FFF Alternates BSP296NH6433XTMA1 Infineon
Functional Equivalent BSP296NH6433XTMA1 Infineon
Functional Equivalent SIHLL110-GE3 Vishay
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details