Power Field-Effect Transistors Active Mature

BSP125H6327XTSA1

Manufacturer: Infineon

Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: SIPMOS POWER-TRANSISTOR
Part Number: BSP125H6327XTSA1
Generic: BSP125
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: November 2012
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 4

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSP125H6327 Infineon
Functional Equivalent BSP125H6433 Infineon
Functional Equivalent BSP125H6433XTMA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip