Power Field-Effect Transistors
Active
Mature
BSG0811ND
Manufacturer: Infineon
Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS POWER-TRANSISTOR, 25V
| Part Number: | BSG0811ND |
|---|---|
| Generic: | BSG0811 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | March 2015 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 7 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSG0810NDIATMA1
|
Infineon |
| Functional Equivalent |
BSG0811NDATMA1
|
Infineon |
| Functional Equivalent |
BSG0813NDIATMA1
|
Infineon |
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med
Need help? Email sales or call (800) 701-8152.