Power Field-Effect Transistors
NRFND
Decline
BSC265N10LSFGATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS 2 POWER-TRANSISTOR
| Part Number: | BSC265N10LSFGATMA1 |
|---|---|
| Generic: | BSC265N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | July 2008 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Low-Med