Power Field-Effect Transistors Active Mature

BSC123N08NS3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 55A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: BSC123N08NS3GATMA1
Generic: BSC123N08
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2008
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates BSC123N08NS3G Infineon
Functional Equivalent BSC123N08NS3G Infineon
FFF Alternates BSC123N08NS3GXT Infineon
Functional Equivalent BSC123N08NS3GXT Infineon
Functional Equivalent BSC123N08NSG Infineon
Functional Equivalent BSZ123N08NS3G Infineon
Functional Equivalent BSZ123N08NS3GATMA1 Infineon
Functional Equivalent BSZ123N08NS3GXT Infineon
Manufacturer Suggested CSD19534Q5A TI
Pricing & Availability
448881 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

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