Power Field-Effect Transistors Active Mature

BSC0906NSATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: MOSFET
Part Number: BSC0906NSATMA1
Generic: BSC0906
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2011
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 8

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies BSC0906NSATMA1, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 12513 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
FFF Alternates BSC0906NS Infineon
Functional Equivalent BSC0906NS Infineon
Functional Equivalent BSC120N03LSG Infineon
Functional Equivalent BSC120N03LSGATMA1 Infineon
Functional Equivalent CSD17579Q5A TI
Functional Equivalent CSD17579Q5AT TI
Pricing & Availability
48551 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: High

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