Power Field-Effect Transistors
Discontinued
BSC082N10LSGATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 13.8A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS 2 POWER-TRANSISTOR
| Part Number: | BSC082N10LSGATMA1 |
|---|---|
| Generic: | BSC082N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | October 2007 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates.
Contact us
or use Request Quote below.
Contact us for pricing and availability.
Risk Indicators
- Lifecycle: High
- Environmental: Med