Power Field-Effect Transistors
NRFND
Decline
BSC060N10NS3GXT
Manufacturer: Infineon
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS 3 POWER-TRANSISTOR
| Part Number: | BSC060N10NS3GXT |
|---|---|
| Generic: | BSC060N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | February 2011 |
|---|---|
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Med-High
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