Power Field-Effect Transistors Active Mature

BSC042NE7NS3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 132A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: MOSFET
Part Number: BSC042NE7NS3GATMA1
Generic: BSC042NE7
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 2009
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies BSC042NE7NS3GATMA1, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 12751 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
Functional Equivalent BSC036NE7NS3G Infineon
Functional Equivalent BSC036NE7NS3GATMA1 Infineon
Functional Equivalent BSC036NE7NS3GXT Infineon
Functional Equivalent BSC040N08NS5 Infineon
Functional Equivalent BSC040N08NS5ATMA1 Infineon
Functional Equivalent BSC042NE7NS3G Infineon
Manufacturer Suggested FDMS037N08B Onsemi
Pricing & Availability
86841 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

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