Power Field-Effect Transistors Active Mature

BSC040N10NS5

Manufacturer: Infineon

Power Field-Effect Transistor, 18A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: MOSFET OptiMOS 5 Power-Transistor 100V
Part Number: BSC040N10NS5
Generic: BSC040N10
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2015
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 5

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent AUIRF7669L2TR Infineon
FFF Alternates BSC040N10NS5ATMA1 Infineon
Functional Equivalent BSC040N10NS5ATMA1 Infineon
FFF Alternates BSC040N10NS5SC Infineon
Functional Equivalent BSC040N10NS5SC Infineon
Manufacturer Suggested CSD18513Q5A TI
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip