Power Field-Effect Transistors NRFND Decline

BSC031N06NS3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: BSC031N06NS3GATMA1
Generic: BSC031N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: February 2009
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSC031N06NS3GXT Infineon
Functional Equivalent BSC034N06NS Infineon
Functional Equivalent BSC034N06NSATMA1 Infineon
Manufacturer Suggested FDMS030N06B Onsemi
Pricing & Availability
36745 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

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