Power Field-Effect Transistors Discontinued

BSC030N04NSGATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 23A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: BSC030N04NSGATMA1
Generic: BSC030N04
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2007
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 8

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested CSD18511Q5A TI
Manufacturer Suggested CSD18513Q5A TI
FFF Alternates DMTH43M8LPSWQ-13 Diodes
Functional Equivalent DMTH43M8LPSWQ-13 Diodes
Manufacturer Suggested FDMS015N04B Onsemi
Manufacturer Suggested ISC028N04NM5ATMA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: High

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip