Power Field-Effect Transistors EOL Phase-Out

BSC028N06LS3G

Manufacturer: Infineon

Power Field-Effect Transistor, 100A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: MOSFET
Part Number: BSC028N06LS3G
Generic: BSC028N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2008
Lifecycle Stage: Phase-Out
Package Information
Package Style: SMALL OUTLINE
Terminals: 5
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested BSC027N06LS5 Infineon
Functional Equivalent BSC100N06LS3G Infineon
Functional Equivalent BSC100N06LS3GATMA1 Infineon
Manufacturer Suggested CSD18532Q5B TI
Manufacturer Suggested CSD18540Q5B TI
Pricing & Availability
Pricing information not available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: High

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