Power Field-Effect Transistors
NRFND
Decline
BSC027N10NS5ATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 194A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
MOSFET
| Part Number: | BSC027N10NS5ATMA1 |
|---|---|
| Generic: | BSC027N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | November 2020 |
|---|---|
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: High