Power Field-Effect Transistors Discontinued

BSC022N04LSATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS POWER-MOSFET
Part Number: BSC022N04LSATMA1
Generic: BSC022N04
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: May 2013
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 8

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested BSC022N04LS6ATMA1 Infineon
Functional Equivalent CSD18502Q5B TI
Functional Equivalent CSD18502Q5BT TI
FFF Alternates CSD18511Q5A TI
Functional Equivalent CSD18511Q5A TI
FFF Alternates CSD18511Q5AT TI
Functional Equivalent CSD18511Q5AT TI
Manufacturer Suggested FDMS015N04B Onsemi
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip