Power Field-Effect Transistors Active Mature

BSC014N04LSATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 40 V OPTIMOS POWER-MOSFET
Part Number: BSC014N04LSATMA1
Generic: BSC014
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: February 2012
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 8

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates BSC014N04LS Infineon
Functional Equivalent BSC014N04LS Infineon
FFF Alternates BSC014N04LSATMA2 Infineon
Functional Equivalent BSC014N04LSATMA2 Infineon
FFF Alternates BSC014N04LSI Infineon
Functional Equivalent BSC014N04LSI Infineon
FFF Alternates BSC014N04LSIATMA1 Infineon
Functional Equivalent BSC014N04LSIATMA1 Infineon
FFF Alternates BSC014N04LSITR Infineon
Functional Equivalent BSC014N04LSITR Infineon
Functional Equivalent BSC019N04NSG Infineon
Functional Equivalent BSC019N04NSGATMA1 Infineon
Manufacturer Suggested FDMS015N04B Onsemi
Pricing & Availability
15000 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip