Power Field-Effect Transistors Discontinued

BSC014N03MSG

Manufacturer: Infineon

Power Field-Effect Transistor, 30A I(D), 30V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS 3 M-SERIES POWER-MOSFET
Part Number: BSC014N03MSG
Generic: BSC014N03
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 2008
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 8

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent BSB017N03LX3GXT Infineon
Functional Equivalent BSC0500NSI Infineon
Functional Equivalent BSC0500NSIATMA1 Infineon
Functional Equivalent CSD17556Q5B TI
Functional Equivalent CSD17556Q5BT TI
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip