Power Field-Effect Transistors Active Mature

BSC011N03LSIATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 37A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS N-CHANNEL POWER-MOSFET
Part Number: BSC011N03LSIATMA1
Generic: BSC011N03
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2011
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSC011N03LS Infineon
Functional Equivalent BSC011N03LSATMA1 Infineon
FFF Alternates BSC011N03LSI Infineon
Functional Equivalent BSC011N03LSI Infineon
Functional Equivalent CSD17559Q5 TI
Functional Equivalent CSD17559Q5T TI
Pricing & Availability
32595 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details