Power Field-Effect Transistors
Discontinued
BSB056N10NN3GXUMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 9A I(D), 100V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS N-CHANNEL POWER MOSFET
| Part Number: | BSB056N10NN3GXUMA1 |
|---|---|
| Generic: | BSB056N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | August 2011 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | CHIP CARRIER |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSB056N10NN3G
|
Infineon |
| Manufacturer Suggested |
BSB056N10NN3GXUMA3
|
Infineon |
| Manufacturer Suggested |
CSD19532Q5B
|
TI |
Pricing & Availability
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Risk Indicators
- Lifecycle: High
- Environmental: Low