Power Field-Effect Transistors
Discontinued
BSB008NE2LX
Manufacturer: Infineon
Power Field-Effect Transistor, 180A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS N-CHANNEL POWER-MOSFET
| Part Number: | BSB008NE2LX |
|---|---|
| Generic: | BSB008NE2 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | June 2011 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | CHIP CARRIER |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -40.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: High
- Environmental: Low
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