Power Field-Effect Transistors
Active
Mature
2N6788
Manufacturer: Infineon
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Manufacturer Description:
TO-39 N-CHANNEL HERMETIC PACKAGE MOS HEXFET
| Part Number: | 2N6788 |
|---|---|
| Generic: | 2N6788 |
| CAGE Code: | C6489, 4KYR2 |
| NSN: | 5961-01-351-4853 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | January 1990 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | CYLINDRICAL |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Active Manufacturers |
NJ Semi
|
2D085 |
Pricing & Availability
94 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: High
- Supply Chain: Med
Need help? Email sales or call (800) 701-8152.