Power Field-Effect Transistors Active Mature

2N6788

Manufacturer: Infineon

Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Manufacturer Description: TO-39 N-CHANNEL HERMETIC PACKAGE MOS HEXFET
Part Number: 2N6788
Generic: 2N6788
CAGE Code: C6489, 4KYR2
NSN: 5961-01-351-4853
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1990
Lifecycle Stage: Mature
Package Information
Package Style: CYLINDRICAL
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Active Manufacturers NJ Semi 2D085
Active Manufacturers VPT Components 52GC4
Pricing & Availability
94 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

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