JANTXV2N6796
Manufacturer: VPT Components
Power Field-Effect Transistor
| Part Number: | JANTXV2N6796 |
|---|---|
| Generic: | 2N6796 |
| CAGE Code: | 52GC4 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | DLA |
|---|---|
| DLA Qualification: | Qualified |
| Date of Introduction: | September 2025 |
| Lifecycle Stage: | Mature |
Package Information
Compliance & Certifications
- DRC Status: DRC Conflict Free
Abacus Technologies supplies JANTXV2N6796, sourced from HARRIS. Inventory shown on this page reflects quantity on hand when available: 49 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks
| Type | Part Number | Manufacturer |
|---|---|---|
| Active Manufacturers |
DLA
|
1X7M5 |
| Active Manufacturers |
Infineon
|
C6489 |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic