Power Field-Effect Transistors Discontinued

IRF710

Manufacturer: Fairchild Semi

Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: 2.0A, 400V, 3.600 OHM, N-CHANNEL POWER MOSFET
Part Number: IRF710
Generic: IRF710
CAGE Code: 1HBD3, 07933, 59621, 7D893, 07263
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: August 1985
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested FQP3N40 Fairchild Semi
Manufacturer Suggested IRF710A Fairchild Semi
Manufacturer Suggested IRF710B Fairchild Semi
FFF Alternates IRF710PBF Vishay
Functional Equivalent IRF710PBF Vishay
Manufacturer Suggested IRF710-PDD Fairchild Semi
Active Manufacturers NJ Semi 2D085
FFF Alternates SIHF710 Vishay
Functional Equivalent SIHF710 Vishay
FFF Alternates SIHF710-E3 Vishay
Functional Equivalent SIHF710-E3 Vishay
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: High
  • Supply Chain: Low

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip