Power Field-Effect Transistors Contact Mfr

VQ1006P

Manufacturer: ES Components

Power Field-Effect Transistor, 0.4A I(D), 90V, 4.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: N-Channel 90-V (D-S) MOSFET
Part Number: VQ1006P
Generic: VQ1006
CAGE Code: 0R708
Category: Power Field-Effect Transistors
Part Type: Transistors
Lifecycle Stage: N/A

Package Information
Package Style: IN-LINE
Terminals: 14
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Med
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip