Power Field-Effect Transistors Contact Mfr

EPC2001C

Manufacturer: Efficient Corp

Power Field-Effect Transistor, 36A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET

Manufacturer Description: ENHANCEMENT MODE POWER TRANSISTOR
Part Number: EPC2001C
Generic: EPC2001
CAGE Code: 6UTY1
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2015
Lifecycle Stage: N/A

Package Information
Package Style: UNCASED CHIP
Terminals: 11

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested LMG5200MOFR TI
Functional Equivalent STD100N10F7 ST Micro
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip